Mesa type diode semiconductor structure - has reduced mesa part and has highly doped residual substrate of small thickness

摘要

The semiconductor structure includes a diode of the mesa type and a block of dielectric material. The dielectric material has larger dimensions than that of the mesa part of the diode. The dielectric material block (10) has two large plane and parallel faces each carrying metallised areas (3, 4). The diode (10) which is reduced at its mesa part has a highly doped residual substrate. The thickness of this substrate is small with respect to the thickness of the mesa part. The diode is buried in the dielectric block so that its residual substrate is in contact with one of the metal areas on the largest face. A metal contact (5) of good heat and electrical conducting properties ensures the connection through the block between the opposite face of the substrate and the metal area of the blocks other largest face.