Process for the growth of a monocrystalline layer epitaxial on a substrate, and the support of the substrate to be used for the implementation of this

摘要

P process which allows the growth of a thin epitaxial layer on a substrate in the form of a plate and in which the substrate, which is fixed in a support, is immersed in a solution supercooled, held in a horizontal position in the solution supercooled during the growth, and, after - latter is removed from the solution in a vertical position of the fact of tilt the support. / p