Avalanche photodiode of the homo:junction type - based on gallium indium arsenide phosphide layers on an indium phosphide substrate

摘要

Avalanche photodiode of the homojunction type has a semiconducting junction consisting of two layers of GayIn1-yAsxP1-x where x is approx. 2y and 0.1 = x =1 and 0.05 = y =0.48, the two layers having opposite types of conductivity. In two specific embodiments x = 1 and y is 0.46-0.48, and x = 0.4-0.5 and y = 0.2-0.25. Diode possess small dark current, high detection current, high avalanche gain, uniform response in the frequency band of luminous radiation, rapid response. The diodes have these properties esp. where operating at optical wavelengths 1 mu.