Majority charge carrier bipolar diode with fully depleted barrier region at zero bias

摘要

A majority charge carrier diode structure in which current flow between two regions of the same conductivity type is controlled by the number of compensating impurities implanted to form between the two regions a narrow, fully-depleted barrier region which presents a potential barrier to each region. The device can be used as a discrete diode or as part of a device e.g. the collector junction of a transistor.