Varactor diode for LC-series circuit, has space-charge zone whose width is larger than half of finger-shaped/comb-shaped structure thickness when specific depletion voltage is applied to form charge carrier free regions

摘要

The diode has a p-doped region (1), an n-doped region (2) and a pn-transition, where the regions are inter-digitated to form a finger-shaped/comb-shaped structure. Width of a space-charge zone (3) is larger than half of the thickness of the structure if a specific depletion voltage is applied to form charge carrier free regions. The structure lies parallel to a section that is formed by a surface of the semiconductor substrate material.