Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it

摘要

This overview deals with original works of authors as well as with works byudnative and foreign authors, which are devoted to this or close topics. It is written withudaccount of the modern state of the problem, to solve which a great amount of successfuludwork was made by Academician of NAS of Ukraine O.V. Snitko. Considered in thisudpaper are the essence of the phenomenon of non-equilibrium depletion with majorityudcharge carriers that takes place in the field effect in silicon and a set of new phenomenaudthat were revealed by the authors when investigating this effect. Besides, analyzed inuddetail are the processes of acceleration inherent to relaxation of the non-equilibriumuddepletion in strong electric fields (Es = 3·10³ud – 5·10⁵ud V/cm) at silicon surface being inudvarious physical-and-chemical states. It is noted that the Franz-Keldysh or Frenkeludeffects for local centers play the main role in acceleration of relaxation with growing Esudat the silicon surface. In this case, an essential role belongs to electron-phononudinteraction of the charge carrier at the local center with continuum phonons around thisudcenter.