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Annealing of uncapped compound semiconductor materials by pulsed energy deposition
Annealing of uncapped compound semiconductor materials by pulsed energy deposition
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机译:通过脉冲能量沉积对未封端的化合物半导体材料进行退火
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摘要
Damaged semiconductor materials are annealed using localized short term energy deposition. In a specific embodiment gallium arsenide damaged during ion implantation is annealed by exposure to short laser pulses.
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