Electromigration resistance in gold thin film conductors

摘要

A method and resulting structure for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, and magnetic bubble structures, is set forth. The conductive stripe includes gold with at least one transition metal from the group niobium, zirconium and hafnium. The gold and at least one transition metal are deposited onto a supporting body. The deposited metallic material is then annealed at a temperature between about 200. degree. C. and 500° C. for a time sufficient to form a gold- transition metal compound within a gold matrix. The conductive stripes are formed by masking and removing portions of the annealed metallic material to produce conductive stripes which may have a width of 6× 10.sup.-4 inches or less. These stripes have significantly improved electromigration performance and do not have significantly increased resistance.