首页> 外国专利> DISPLAYING METHOD FOR SPECIFIED TERMINAL SIDE OF INTERMETALLIC COMPOUND SEMICONDUCTOR

DISPLAYING METHOD FOR SPECIFIED TERMINAL SIDE OF INTERMETALLIC COMPOUND SEMICONDUCTOR

机译:金属间化合物半导体特定端子侧的显示方法

摘要

PURPOSE:To easily identify the kind of a terminal side of a cylindrical ingot of an intermetallic cpd. semiconductor by forming a plurality of identification belts on the ingot surface over the total length of the longitudinal direction while varying the space or the width. CONSTITUTION:In order to easily indentify both terminal sides of indium side 2 and antimony side 3 of cylindrical ingot 1 of an intermetallic cpd. semiconductor formed by a pulling method, e.g. indium antimonide, an acid resistant paint, e.g. epoxy type coating is coated onto the surface of ingot 1 in the form of stripes over the total length of the axial direction, or acid resistant tapes are stuck. Photoresist layers may be formed using a photosensitive material. Thus, resists 4, 5, 6 are arranged at different spaces. Since the positional relation of the three resists at side 2 and that at side 3 become reverse, sides 2, 3 can be identified easily and correctly.
机译:目的:为了容易地识别金属间化合物CPD的圆柱形锭的末端侧的种类。通过改变长度或宽度同时在纵向的整个长度上在铸锭表面上形成多个识别带来形成半导体。组成:为了易于识别金属间化合物的圆柱形锭1的铟侧2和锑侧3的两个末端侧。通过拉制方法形成的半导体,例如锑化铟,一种耐酸涂料,例如在锭料1的表面上沿轴向的整个长度以条纹形式涂覆环氧型涂层,或者粘贴耐酸胶带。可以使用光敏材料形成光致抗蚀剂层。因此,抗蚀剂4、5、6布置在不同的空间。由于在侧面2处的三个抗蚀剂的位置关系与在侧面3处的抗蚀剂的位置关系相反,因此可以轻松,正确地识别侧面2、3。

著录项

  • 公开/公告号JPS5523079A

    专利类型

  • 公开/公告日1980-02-19

    原文格式PDF

  • 申请/专利权人 DENKI ONKYO CO LTD;

    申请/专利号JP19780096875

  • 发明设计人 MASUDA NOBORU;

    申请日1978-08-09

  • 分类号B28D5/02;B28D5/00;C30B33/00;H01L21/331;H01L29/12;H01L29/73;

  • 国家 JP

  • 入库时间 2022-08-22 19:04:06

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