Integrated semiconductor switching circuit - has sixth MISFET with source terminal connected between second and third MISFETs and to common reference potential via capacitor

摘要

An integrated semiconductor circuit has MISFETs of enhancement type and a switching section. The latter extends the signal input to the gate electrodes of two MISFETs. The source electrodes of the latter are connected to a common reference potential. The drain terminal of the first MISFET (T1) is connected to a common supply potential via the source-to-drain region of a third MISFET (T3). The drain terminal of the second MISFET (T2) is connected to this supply via the source-to-drain region of a fourth MISFET (T4). The fourth MISFET (T4) is switched in parallel to a sixth MISFET (T6) serving as a resistor. The fifth (T5) and sixth (T6) MISFETs are formed as depletion type transistors serving as a switching section in opposition to the first two MISFETs (T1, T2).