PASSIVATION COMPOUND FOR A SEMICONDUCTOR DEVICE, INCLUDING A SILICON NITRIDE LAYER (SI3N4) AND A PHOSPHOSILICATE GLASS LAYER (PSG), AND MANUFACTURING METHOD

摘要

The invention relates to a passivation compound for an integrated circuit of the type comprising a body of semiconductor material in which semiconductor devices are formed. According to the invention, it comprises an impermeable layer 55 formed on the surface of the body of semiconductor material 12, a layer of phosphosilicate glass 57 formed directly on the layer 55, contact openings 54 passing through the layer 57 and the layer 55 to the underlying semiconductor region, the upper edges of the contact openings in the layer 57 being rounded; and a metallic layer 58 covering the layer 57, and extending on the rounded edges through the openings 54 to electrically contact all the regions of semiconductors lying below any portion of the contact openings which pass through the layers 55 and 57. /P P The invention applies in particular to the semiconductor industry.