PROCESS FOR PASSIVATING AN INTEGRATED CIRCUIT, USING A SILICON NITRIDE LAYER (SI3N4) AND A PHOSPHOSILICATE GLASS LAYER (PSG)

摘要

THE INVENTION RELATES TO A PROCESS FOR PASSIVATING AN INTEGRATED CIRCUIT COMPRISING A SEMICONDUCTOR SUBSTRATE WITH SEMICONDUCTOR DEVICES HAVING ACTIVE REGIONS AND FIELD REGIONS, AND IN WHICH THE SUBSTRATE OF AN INSULATING LAYER IS COVERED OR CONTACT OPENINGS ARE FORMED, A PHOSPHOSILICATE GLASS LAYER IS APPLIED ON THE INSULATING LAYER, PARTS ARE REMOVED FROM THE ACTIVE REGIONS OF THE DEVICE, THE GLASS LAYER IS HEATED AND A LAYER IS APPLIED METAL ON THE SURFACE OF THE GLASS LAYER, WHICH CROSSES THE OPENINGS TO THE UNDERLYING PARTS IN THE ACTIVE REGIONS OF THE DEVICE. /P P ACCORDING TO THE INVENTION, BEFORE APPLYING THE GLASS LAYER TO THE PHOSPHOSILICATE 32, APPLY A WATERPROOF LAYER 30 ON THE INSULATING LAYER, HEAT IN THE PRESENCE OF STEAM AND AFTER HEATING REMOVE THE PARTS OF LAYER 30 BEING ABOVE THE ACTIVE REGIONS OF THE DEVICE. /P P L ' INVENTION APPLIES IN PARTICULAR TO THE SEMICONDUCTOR INDUSTRY.