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Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon
Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon
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机译:利用多晶硅的选择性刻蚀和反掺杂制造改进的短沟道MOS器件的方法
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摘要
A method for fabricating a short channel MOS device is described wherein the conductivity of the gate member is increased by a factor of about 2.5 by counterdoping a P-type doped polycrystalline line with an N- type dopant.
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