Fabrication of an integrated injection logic device incorporating an MOS/bipolar current injector

摘要

A novel semiconductor configuration is presented utilizing a narrow, gate-like (base) structure formed of, for example, a floating polycrystalline silicon line, that is capable of modulating both the number and type of carriers (electrons or holes) flowing thereunder, between a pair of similarly doped, separated regions. One particular structure described is a four terminal I.sup.2 L configuration where the inverter transistor can function in either the mode of an MOS device or the mode of a bipolar device.