Modeling and Performance of Double Heterojunction GaAlAs/GaAs Integrated Injection Logic. Fabrication and DC Characterization of the Basic Cell

摘要

This paper first presents a quantitative estimate of the potentialities of the GaAlAs/GaAs H. I²L which relies on an accurate modeling related to physical device parameters. The interdependence of the forward and reverse current gains of the DHSTs processed by MBE and Mg-ion implantation which is subsequently analysed provides a verification of the charge-control models used for this evaluation.