Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions

摘要

A version of integrated injection logic is disclosed in which both the switching transistor and the current source transistor are of the vertical type and in which the logic gates are fabricated in the same semiconductor integrated chip with linear circuits which are based on the complementary bipolar integrated circuit technology.PPThe injection logic gate is fabricated simultaneously with the linear integrated circuit using selected steps of the complementary bipolar technology. High voltage linear circuits and efficient logic circuits are achieved based on the use of a single moderate resistivity N-type epitaxial layer deposited on a high resistivity P-type substrate. In the logic circuit portion the epitaxial layer forms the collector zone of the current source transistor and the base zone of the switching transistor.