首页> 外国专利> SINGLE CRYSTAL GROWING APPARATUS BY FLOATING ZONE MELTING METHOD

SINGLE CRYSTAL GROWING APPARATUS BY FLOATING ZONE MELTING METHOD

机译:浮区熔融法单晶生长装置

摘要

PURPOSE:To prevent the heating efficiency of the titled growing apparatus from lowering owing to the scattering of an evaporated substance by coaxially arranging a predetermined cylindrical gas introduction pipe and a predetermined cylindrical gas exhaust pipe around a starting material rod and a grown crystal rod, respectively. CONSTITUTION:Nitrogen gas as an atmospheric gas is passed through transparent quartz pipe 6 from the lower end, and upper and lower cylindrical quartz pipes 7, 8 are arranged in pipe 6. Nitrogen gas is fed into lower pipe 8 and exhausted from upper pipe 7. By this construction an evaporated substance can be prevented from sticking to pipe 6, and the efficiency of heating melt zone 5 with a luminous lamp (not shown) can be prevented from lowering.
机译:目的:通过在原料棒和长晶棒周围分别同轴地布置预定的圆柱形气体引入管和预定的圆柱形气体排气管,以防止由于蒸发的物质散布而导致标题的生长设备的加热效率降低。 。组成:氮气作为大气气体从下端穿过透明石英管6,上下圆柱形石英管7、8分别布置在管6中。氮气被送入下管8并从上管7排出。通过这种构造,可以防止蒸发的物质粘附到管道6上,并且可以防止利用发光灯(未示出)加热熔融区域5的效率降低。

著录项

  • 公开/公告号JPS5637291A

    专利类型

  • 公开/公告日1981-04-10

    原文格式PDF

  • 申请/专利权人 NIPPON ELECTRIC CO;

    申请/专利号JP19790110585

  • 发明设计人 SHIRAKI KENICHI;

    申请日1979-08-29

  • 分类号C30B13/00;

  • 国家 JP

  • 入库时间 2022-08-22 16:22:57

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