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HYPERPURE GERMANIUM COAXIAL RADIATION DETECTOR

机译:超纯锗同轴辐射探测器

摘要

F23294-CanadaABSTRACT OF THE DISCLOSUREA radiation detector made of hyperpure germaniumhas generally the shape of a follow cylinder with an outergenerally cylindrical surface and an inner generally cylin-drical surface and is formed with a p+ contact and n+ contact.One of the contacts is on the outer cylindrical surface ofthe semiconductor and the other is on the inner cylindricalsurface, and both contacts are themselves cylindrical. Eachcylinder formed by a contact is open at at least one end thereof,the open ends being adjacent rather than opposite ends of therespective cylinders. One of the contacts is a thin contact,having a thickness of one micron or less. The germanium crystalis formed with an annular groove coaxial with the contacts andextending to within one millimeter of the thin contact at aposition inward of the open end of the thin contact. Thus,when a reverse bias is applied across the germanium crystalbetween the contacts, the resulting equipotential lines arerelatively crowded at the groove, the electric field is ofreduced strength adjacent the open end of the thin contact,and reverse leakage current is inhibited.
机译:F23294-加拿大披露摘要高纯锗制成的辐射探测器通常具有跟随圆柱体的形状,外部大体呈圆柱形的表面和内部大体呈圆筒形的锥形表面并形成有p +触点和n +触点。触点之一在圆柱的外圆柱表面上半导体,另一个在内圆柱上表面,两个触点本身都是圆柱形的。每由触头形成的圆柱体在其至少一端敞开,开口端是相邻的而不是相反的两端各个气缸。触点之一是薄触点,具有一微米或更小的厚度。锗晶体形成有与触头同轴的环形凹槽,并且延伸到薄触点的1毫米内位置在薄触点开放端的内侧。从而,当对锗晶体施加反向偏压时触点之间的等势线为在凹槽处比较拥挤,电场是薄触点开口端附近的强度降低,并抑制反向漏电流。

著录项

  • 公开/公告号CA1108778A

    专利类型

  • 公开/公告日1981-09-08

    原文格式PDF

  • 申请/专利权人 ORTEC INCORPORATED;

    申请/专利号CA19780315363

  • 发明设计人 RAUDORF THOMAS W.;

    申请日1978-10-31

  • 分类号H01L31/00;

  • 国家 CA

  • 入库时间 2022-08-22 15:44:19

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