LOW FREQUENCY POWER AMPLIFIER USING MOS FET'S

摘要

LOW FREQUENCY POWER AMPLIFIER USING MOS FET'SABSTRACT OF THE DISCLOSUREA low frequency power amplifier uses MOS FET'seach having a semiconductor device unit including asource electrode, a drain electrode and an insulatedgate electrode filled in a can type casing with thesource electrode being electrically connected to thecan type casing. When the MOS FET having its sourceelectrode connected to the can type casing is mountedon a heat sink and operated in a source follower con-figuration, a stray capacity between the can-shapedcasing and the heat sink is connected in parallel witha load so that the amplifier oscillates. The heat sinkis grounded through an impedance element and the straycapacity is isolated from the load to prevent theocsillation.