High bandgap window layer for GaAs solar cells and fabrication process therefor

摘要

P the invention relates to the solar cells in a semi - conductor and their manufacture. / p & & p & according to the invention, a thin layer of gallium arsenide of the n type, is deposited on a p-type layer forming a substrate chosen from among the compounds such as the ternary antimonide and aluminum phosphide and indium phosphide and aluminium. The impurities diffuse of the p type substrate in a part of the layer of gallium arsenide (gaas) and form a pn junction in this layer. The amount of gallium is necessary to the formation of the junction is minimum and the substrate constitutes a layer of a window having a forbidden band. / p & & p & application to the embodiment of the solar cells of a high yield and / p