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FABRICATION OF CdTe ULTRA THIN FILM SOLAR CELL WITH WIDE BANDGAP WINDOW LAYER OF CdS:O BY MAGNETRON SPUTTERING

机译:磁控溅射法制备CdS:O带隙宽的CdTe超薄膜薄膜太阳能电池

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Oxygenated cadmium sulfide (CdS:O) thin films have been prepared by reactive RF magnetron sputtering with varying the O partial pressure from 0.08 mTorr to 0.18 mTorr. The quantitative results from the X-ray photoelectron spectroscopy (XPS) show that the relative concentration of oxygen atoms increases considerably with O partial pressure and O atoms are mostly combined with the S atoms to form SO4 complexes. The bandgap of the films were found in the range of 2.65 eV-2.74 eV.The film's crytallinity was observed to reduce with the increase of O partial pressure. The complete cell was fabricated by sputtering technique with a novel configuration of 'glass/FTO/ZnO:Sn/CdS:O/CdTe/Cu:C/Ag'. The performances of the ultra-thin cells (CdTe ~ 1μm) were evaluated under illumination of 1.5 AM, and the efficiency of 10.27% was achieved so far.
机译:通过反应性射频磁控溅射,将O分压从0.08 mTorr改变为0.18 mTorr,可以制备出氧化的硫化镉(CdS:O)薄膜。 X射线光电子能谱(XPS)的定量结果表明,氧原子的相对浓度随O分压而显着增加,并且O原子主要与S原子结合形成SO4络合物。薄膜的带隙在2.65 eV-2.74 eV范围内。随着O分压的增加,薄膜的结晶度降低。通过溅射技术以“玻璃/ FTO / ZnO:Sn / CdS:O / CdTe / Cu:C / Ag”的新颖构造来制造整个电池。在1.5 AM的光照下评估了超薄电池(CdTe〜1μm)的性能,到目前为止,效率达到了10.27%。

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