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A method for forming a crystalline film of a paramagnetic sodium thallium type intermetallic compound and apparatus for performing said method

机译:顺磁性钠sodium型金属间化合物的结晶膜的形成方法以及进行该方法的装置

摘要

An intermetallic compound having a dual diamond crystal structure (e.g. LiAl, LiCd or LiZn) is formed on a substrate surface. A layer containing the constituent elements is first formed on the substrate, and is then heated in a magnetic field set at a selected angle (e.g. 0 DEG or 90 DEG ) to the layer. A crystalline film of the compound is formed with a major crystallographic plane aligned with the magnetic field. The substrate may be a sheet of one of the constituent metals (e.g. Al, Cd or Zn), and the layer formed by impinging ions of the other metal (e.g. Li) onto the substrate surface. …??The crystalline film produced can be used as a substrate for the growth of crystalline silicon. …??Apparatus for performing the method includes means (105, 106) for positioning and heating (110) the substrate (104) within the magnetic field established by the magnet (101, 102). Means (107) can also be provided for firing ions of one of the metals (e.g. Li, 108) onto the substrate (104). Similar means (113) can be provided to fire silicon (112) ions onto the crystalline film after its formation. The apparatus may be contained in a vacuum chamber.
机译:具有双重金刚石晶体结构的金属间化合物(例如,LiAl,LiCd或LiZn)形成在基板表面上。首先在基片上形成含有构成元素的层,然后在与该层成选定角度(例如0°或90°)的磁场中加热。形成化合物的结晶膜,该结晶膜具有与磁场对准的主结晶面。衬底可以是一种组成金属(例如Al,Cd或Zn)中的一种的片,并且该层是通过将另一种金属(例如Li)的离子撞击到衬底表面上而形成的。 ……产生的结晶膜可以用作结晶硅生长的衬底。用于执行该方法的设备包括用于在由磁体(101、102)建立的磁场内定位和加热(110)衬底(104)的装置(105、106)。还可以提供装置(107),用于将金属(例如,Li,108)之一的离子发射到衬底(104)上。可以提供类似的装置(113),以在形成结晶膜之后将硅(112)离子发射到结晶膜上。该设备可以容纳在真空室中。

著录项

  • 公开/公告号EP0003425B1

    专利类型

  • 公开/公告日1982-01-13

    原文格式PDF

  • 申请/专利权人 SOTEC CORPORATION;

    申请/专利号EP19790300118

  • 发明设计人 REITZ NORMAN ERNEST;

    申请日1979-01-24

  • 分类号C30B25/06;C03B25/10;C30B25/16;C30B25/18;C22F3/02;H01L31/02;H01L21/203;

  • 国家 EP

  • 入库时间 2022-08-22 13:09:57

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