method and device for rapid nanoseconds of oxides in thin and adherent layers on kunststoffsubstrate

• 1. 用于在处理腔室中的层沉积期间支撑基板载体和掩模载体的固持布置、用于在基板上沉积层的设备、以及用于对准支撑基板的基板载体与掩模载体的方法 [P] . 中国专利： CN107109621A . 2017-08-29
• 2. 用于在真空涂布工艺中处理若干掩模的方法、用于通过在基板上沉积数个不同材料层来处理基板的方法和用于涂布基板的设备 [P] . 中国专利： CN109673158B . 2021.04.02
• 3. A method and device for rapid vapor deposition of oxides in thin and firmly adhering layers on plastic traeger [P] . 德国专利： DE2444898A1 . 1975-04-10

  机译： 一种在薄层上牢固粘合的薄层中快速气相沉积氧化物的方法和装置

• 4. Device for the rapid depositing of oxides in thin layers which adhere well to plastic supports [P] . 美国专利： US4006340A . 1977-02-01

  机译： 在薄层中快速沉积氧化物的装置，可以很好地粘附到塑料支撑物上

• 5. Method of preparation by rapid annealing of a thin layer of material crystallized oxide and substrate coated of a thin layer obtained by this. [P] . 法国专利： FR2667437B1 . 1992-10-30

  机译： 通过快速退火材料结晶氧化物的薄层的制备方法以及由此获得的涂覆有薄层的基材的方法。

• 1. Dopant-Tunable Ultrathin Transparent Conductive Oxides for Efficient Energy Conversion Devices [J] . Dae Yun Kang, Bo-Hyun Kim, Tae Ho Lee, 纳微快报：英文版 . 2021,第012期
• 2. Local anodic oxidation as a method of fabrication optoelectronic devices based on thin TMDC layers [C] . Bogdan R. Borodin, Fedor A. Benimetskiy, Alexander N. Smirnov, International Conference on Metamaterials and Nanophotonics . 2020
• 3. Exploiting process synergy between anodic aluminum oxide nanotemplates and atomic layer deposition: From thin films to 3D nano-electronic devices. [D] . Banerjee, Parag. 2011
• 4. Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices [O] . Hui-Ying Li, Yun-Fei Liu, Yu Duan, 2015
• 5. Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices [O] . Hui-Ying Li, Yun-Fei Liu, Yu Duan, 2015
• 6. Interfacial and Breakdown Characteristics of MOS (Metal-Oxide-Semiconductor) Devices with Rapidly Grown Ultrathin SiO2 Gate Insulators. [R] . Moslehi, M. M., Shatas, S. C., Saraswat, K. C., 1987

• 1. Effect of different processing methods for the hole transporting layer on the performance of double layer organic light-emitting devices [J] . SU0 Fan YUJun-sheng DENG Jing LOUShuang-ling JIANGYa-dong . 光电子快报：英文版 . 2007,第4期
• 2. Rapid communication Ruthenium disulfide thin films prepared by the successive ionic layer adsorption and reaction (SILAR) method [J] . LIUXiaoxin JINZhengguo ZHAOJuan BUShaojing . 稀有金属：英文版 . 2004,第1期
• 3. Simple and Rapid Thin-layer Chromatography Method for Quantitative Measurement of Free Cholesterol in Serum [J] . 李克 . 医学研究生学报 . 1990,第2期
• 4. Dopant-Tunable Ultrathin Transparent Conductive Oxides for Efficient Energy Conversion Devices [J] . Dae Yun Kang ,Bo-Hyun Kim ,Tae Ho Lee . 安徽地质 . 2021,第012期
• 5. 用于激波管式发动机喷流模拟装置中毫秒级快速同步阀 [C] . 刘伟雄 . 第七届全国激波管与激波学术交流会 . 1995
• 6. 铁矿石烧结中氮氧化物与制粒粘附层影响的研究 [A] . 程明 . 2018