Method for thermo-compression diffusion bonding a structured copper strain buffer to each side of a substrateless semiconductor device wafer

摘要

A method is provided for thermo-compression diffusion bonding respective structured copper strain buffers directly to each of the two major opposed surfaces of a substrateless semiconductor device wafer having a beveled outer edge surface. A selected portion of each strain buffer axially aligned with a like portion of the other strain buffer is diffusion bonded to the wafer while subjecting the wafer only to substantially compressive force so as to avoid wafer fracture. The lateral extent of each strain buffer is less than that of the respective wafer surface in contact therewith, allowing the beveled surface to be cleaned and passivated prior to attachment of the strain buffers to the wafer via diffusion bonding.