首页> 外国专利> POLYIMID, POLYISOINDOLOCHINAZOLINDION, POLYOXAZINDION AND POLYCHINAZOLINDION PRE-STAGES, THEIR PRODUCTION AND USE.

POLYIMID, POLYISOINDOLOCHINAZOLINDION, POLYOXAZINDION AND POLYCHINAZOLINDION PRE-STAGES, THEIR PRODUCTION AND USE.

机译:聚酰亚胺,聚异吲哚并噻唑啉酮,聚氧杂嗪和聚苯并吡咯啉的预加工阶段,其生产和使用。

摘要

The present invention relates to oligomeric and/or polymeric radiation-reactive precursor stages of polyimides, polyisoindoloquinazoline diones, polyoxazine diones and polyquinazoline diones as well as to a method for the preparation of these radiation-reactive precursor stages. The invention provides addition products of olefinically unsaturated monoepoxides on carboxyl group-containing polyaddition products of aromatic and/or heterocyclic tetracarboxylic-acid dianhydrides and diamino compounds or diamino compounds with at least one ortho-position amido group, or on carboxyl group-containing polyaddition products of aromatic and/or heterocyclic dihdyroxy dicarboxylic acids or corresponding diaminodicarboxylic acids and diisocyanates. The radiation-reactive precursor stages according to the invention are suitable, for example, for the manufacture of highly heat-resistant relief structures.
机译:本发明涉及聚酰亚胺,聚异吲哚并喹唑啉二酮,聚恶嗪二酮和聚喹唑啉二酮的低聚物和/或聚合物辐射反应性前体阶段,以及制备这些辐射反应性前体阶段的方法。本发明提供了在不饱和芳族和/或杂环四羧酸二酐与具有至少一个邻位酰胺基的二氨基化合物或二氨基化合物的含羧基的加成产物上,或在含羧基的加成产物上的烯属不饱和单环氧化物的加成产物。芳族和/或杂环二羟基二羧酸或相应的二氨基二羧酸和二异氰酸酯。根据本发明的辐射反应性前驱体级例如适合于制造高度耐热的浮雕结构。

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