A TEMPERATURE-STABLE DIELECTRICMATERIAL FOR USE AT VERY HIGH FREQUENCYAND A METHOD OF MANUFACTURE OF SAID MATERIALAbstract of the DisclosureA dielectric material having a high dielectricconstant, very low high-frequency losses and very hightemperature stability is prepared in particular by sinter-ing previously ground raw materials in an oxidizing atmo-sphere at 1450°C. The molar composition of the rawmaterials is as follows : t TiO2, x SnO2, y ZrO2, a NiO,b La2O3, where t is between 0.9 and 1.1, x is between0.1 and 0.4 moles, y is between 0.6 and 0.9, a is between0.015 and 0.06 moles, b is between 0.01 and 0.1 moleswith an addition of iron of 0.0035 mole in respect ofone mole of TiO2 obtained, for example, from the use ofsteel equipment for the grinding operation. When x isin the vicinity of 0.35, the coefficient of thermal varia-tion Tf is reduced to zero and the quality criterion Q.fis high.-1-
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