Liquid metal inclusion migration by means of an electrical potential gradient

摘要

Liquid metal inclusions are migrated in a host body of semiconductor material by means of an electrical potential gradient to produce regions of recrystallized single crystal semiconductor material in the host body. The resistivities of the regions and the semiconductor material of the host body will be different and if the conductivity types of the regions and the semiconductor material of the host body are also different, P-N junctions will be formed between the regions and the host body.