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Method of fabricating a narrow band-gap semiconductor CCD imaging device
Method of fabricating a narrow band-gap semiconductor CCD imaging device
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机译:窄带隙半导体CCD成像装置的制造方法
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摘要
A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level insulation. An opaque field plate over first level insulation is provided for signal channel definition. Second level insulation (ZnS) is substantially thicker than the first level, and is provided with a stepped or sloped geometry under the first level gates. Input and output diodes are provided with MIS guard rings to increase breakdown voltages.
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