Method of manufacturing a silicon wafer with interior microdefects capable of gettering

摘要

A semiconductor wafer is first heat treated in a non-oxidising atmosphere in a temperature in the range from 950°C to 1300 °C to diffuse out oxygen (02) from near the surfaces 1 and 2 of the wafer (oxygen density shown by broken line in Figure 3B). The wafer is then heat treated at a temperature in the range from 600 °C to 800 °C to create a high density of defects 3 (defect density shown by solid lines in Figures 3B and 3D) which are capable of gettering, in the interior of the wafer.