A METHOD OF FORMING A SHALLOW AND HIGH CONDUCTIVITY BORON DOPED LAYER IN SILICON

摘要

Implantation with a low energy (e.g. 75 keV and less), of a boron bifluor dose (BF2) in a region on a silicon substrate which is postendommagé préendommagé or by a silicon implant so that the annealing or activation can be accomplished at temperatures ranging from 550oC and 900oC.