首页> 外国专利> Photocathode for electron tube inlet comprising a semiconductor device with photoemission by transmission and method of constructing the said photocathode.

Photocathode for electron tube inlet comprising a semiconductor device with photoemission by transmission and method of constructing the said photocathode.

机译:用于电子管入口的光电阴极,包括通过透射而发射光的半导体器件,以及构造所述光电阴极的方法。

摘要

The photocathode incorporates a semiconductor device 12 attached by means of a glass sealing layer 13 to a transparent support which is made up of two parts namely a plate 11 of material having much higher transition and softening or melting points than that of the sealing glass and a ceramic ring 14; plate and ring being joined by brazing around their periphery on the side of the face of the plate opposite the semiconductor device, the periphery of the brazing side of the plate and its lateral edge being coated with radiation-absorbing layers 18 of black metal oxides, and the perimeter of the ring, overhanging the plate, being provided on the semiconductor side with means 20 of fastening the tube body. Application to photoelectric detection tubes. IMAGE
机译:光电阴极包含一个半导体器件12,该器件通过玻璃密封层13连接到透明支撑物上,该透明支撑物由两部分组成,即板11,其材料的转变和软化或熔点比密封玻璃的过渡和软化或熔点高得多。陶瓷环14;通过围绕板的与半导体器件相对的面的侧面上的周边进行钎焊来接合板和环,该板的钎焊面的周边及其侧边缘涂覆有黑色金属氧化物的辐射吸收层18,环的伸出板的环的周边在半导体侧设有固定管体的装置20。应用于光电检测管。 <图像>

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