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Photocathode for electron tube inlet comprising a semiconductor device with photoemission by transmission and method of constructing the said photocathode.
Photocathode for electron tube inlet comprising a semiconductor device with photoemission by transmission and method of constructing the said photocathode.
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机译:用于电子管入口的光电阴极,包括通过透射而发射光的半导体器件,以及构造所述光电阴极的方法。
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摘要
The photocathode incorporates a semiconductor device 12 attached by means of a glass sealing layer 13 to a transparent support which is made up of two parts namely a plate 11 of material having much higher transition and softening or melting points than that of the sealing glass and a ceramic ring 14; plate and ring being joined by brazing around their periphery on the side of the face of the plate opposite the semiconductor device, the periphery of the brazing side of the plate and its lateral edge being coated with radiation-absorbing layers 18 of black metal oxides, and the perimeter of the ring, overhanging the plate, being provided on the semiconductor side with means 20 of fastening the tube body. Application to photoelectric detection tubes. IMAGE
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