Method for forming an aluminum metallic thin film by vapor phase growth on a semiconductor substrate

摘要

An aluminum thin film (14, 24) for semiconductor devices has been heretofore formed by vacuum deposition. However, because the aluminum to be deposited on a semiconductor substrate by vacuum deposition has a directional property of growth, breakage of the resultant aluminum wiring often occurred at a step or sidewall (2a) of the substrate.P PThe present invention provides a method for forming the aluminum thin film (14, 24) by chemical vapor deposition, in which AlCl.sub.3 is reacted with molten aluminum (46) to form AlCl, and the produced AlCl is decomposed into Al and AlCl.sub.3 in the vicinity of the semiconductor substrate, i.e. wafer (47), maintained at a low temperature so as to cause the produced Al to be grown on the wafer (47). In accordance with the present invention, the an aluminum thin film (24) having a uniform thickness can be formed.