PURPOSE:To enable easy detection of a troubled position by coating on the surface of the chip of an integrated circuit with a heat sensitive material or an infrared sensitive material, hermetically sealing and carrying out an electrical destruction test. CONSTITUTION:An LSI chip 1 is bonded 3 with a wire and coated with, e.g., heat sensitive resin 2 thinly and hermetically sealed to make a sample for destruction by an electrostatic destruction test or a surge test, a hot spot is generated and if the temperature of the hot spot exceeds the eutectic temperature of aluminum or silicon or the melting temperature of silicon, a contact or a junction has a trouble. And, if the withstand limit of an oxidized film is exceeded, the oxidized film is destructed and the current is concentrated on the destruction point and heat is generated. In order to detect the change of temperature, a heat sensitive material or an infrared sensitive material is used. At the current concentration point, rapid change of the magnetic field also arises and a magnetic material is coated for detection whereby change of the magnetic field of the magnetic material is detected by a secondary electron image of SEM.
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