首页> 外国专利> METHOD OF PRODUCING LIGHT RESPONSIVE AMORPHOUS SEMICONDUCTORMATERIAL, PHOTOANODE PRODUCED BY SAME MATERIAL AND PHOTOELECTROCHEMICAL CELL INCLUDING SAME PHOTOANODE

METHOD OF PRODUCING LIGHT RESPONSIVE AMORPHOUS SEMICONDUCTORMATERIAL, PHOTOANODE PRODUCED BY SAME MATERIAL AND PHOTOELECTROCHEMICAL CELL INCLUDING SAME PHOTOANODE

机译:制备光响应性非晶态半导电材料,由相同材料制成的光致电极和包括相同光致发光材料的光电化学电池的方法

摘要

A photoresponsive amorphous semiconductor material is modified by incorporating at least one compensating agent selected from a group consisting of hydrogen, lithium, fluorine, beryllium, aluminum, boron, magnesium, other Group I elements, and compounds of these elements. The semiconductor material is cathodically treated either simultaneously with or subsequent to this modification. The semiconductor material may be additionally modified by incorporating a second modifying agent selected from a group consisting of silicon, the transition elements, the lanthanides, and compounds of these elements. The semiconductor material also may be subjected to heat treatment in an inert atmosphere before the cathodic treatment. A photoanode utilizing the above described semiconductor material further includes a substrate to support a film of said material. The photoanode may additionally include a second semiconductor film having a small band gap inserted between said substrate and said first semiconductor film. These photoanodes may be used in an electrochemical cell for the conversion of light into electrical energy or energy stored in a fuel.
机译:通过掺入选自氢,锂,氟,铍,铝,硼,镁,其他I族元素以及这些元素的化合物中的至少一种补偿剂,来对光响应性非晶半导体材料进行改性。在该修改的同时或之后,对半导体材料进行阴极处理。可以通过并入选自硅,过渡元素,镧系元素和这些元素的化合物中的第二改性剂来另外修饰半导体材料。半导体材料还可以在阴极处理之前在惰性气氛中进行热处理。利用上述半导体材料的光电阳极还包括衬底,以支撑所述材料的膜。光电阳极还可包括第二半导体膜,该第二半导体膜在所述基板和所述第一半导体膜之间插入有小的带隙。这些光阳极可以在电化学电池中用于将光转换成电能或存储在燃料中的能量。

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