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METHOD FOR ADJUSTMENT OF ATMOSPHERE OF N2 SEALING IN SEMICONDUCTOR INDUSTRY WORKSHOP

机译:半导体工业车间中N2密封气氛的调整方法

摘要

PURPOSE:To enable to cut down the amount of expensive liquid nitrogen consumed as well as to contrive economy in the running cost by a method wherein the N2 contained in the atmospheric gas exhausted from the workshop where N2-sealed for semiconductor industry is refined by performing an absorbing and detaching processes. CONSTITUTION:The N2 contained in an atmospheric gas is absorbed by passing the atmospheric gas containing O2 as impurities through the absorbing tower wherein one or more kinds of natural tuff, processed natural tuff, semisynthetic zeolite and synthetic zerolite are filled as an absorbing agent. Then, high purity N2 gas is brought out by detaching the N2 which is absorbed to the absorbing material using the pressure which is lower than that used when it is absorbed, and this N2 gas is returned to the workshop. The absorption and isolation operation of N2 using absorbing material can be performed following general absorbing technique, but desirably, two or more absorbing towers wherein absorbing material is filled are to be used in such a manner that while an absorbing operation and a detaching operation are alternately performed, thereby enabling to conduct a continuous processing.
机译:目的:为了减少消耗的昂贵液氮的量,并通过以下方法节约运行成本,该方法是通过对从用于半导体工业的N2密封的车间排出的大气中所含的N2进行精炼来实现的。吸收和分离过程。组成:通过将含有作为杂质的O2的大气气体通过吸收塔来吸收大气中的N2,其中填充了一种或多种天然凝灰岩,加工的天然凝灰岩,半合成沸石和合成零沸石作为吸收剂。然后,通过使用比吸收时所使用的压力低的压力来分离被吸收到吸收材料上的N 2,从而产生高纯度的N 2气体,并且该N 2气体返回到车间。使用吸收材料的N 2的吸收和分离操作可以按照常规吸收技术进行,但是期望地,以填充吸收材料的方式使用两个或更多个吸收塔,使得吸收操作和分离操作交替地进行。执行,从而能够进行连续处理。

著录项

  • 公开/公告号JPS6032316A

    专利类型

  • 公开/公告日1985-02-19

    原文格式PDF

  • 申请/专利权人 KOUGIYOU KAIHATSU KENKYUSHO;

    申请/专利号JP19830142844

  • 发明设计人 TAMURA TAKAAKI;

    申请日1983-08-03

  • 分类号C01B21/04;H01L21/02;

  • 国家 JP

  • 入库时间 2022-08-22 08:29:45

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