FORMATION OF P-N JUNCTION OF II-VI GROUP COMPOUND SEMICONDUCTORS

摘要

PURPOSE:To epitaxially grow a II-VI group compound semiconductor on a single crystal substrate of another II-VI group compound semiconductor having either P or n type conductivity such that the grown semiconductor has a conductivity contrary to that of the substrate, by controlling the unequilibrium condition by means of cluster ion beam deposition or ion beam deposition process. CONSTITUTION:A single crystal substrate 2 of a II-VI group compound semiconductor having either P or n type conductivity is attached to a substrate holder 1 disposed in a high vacuum. Elements 8a and 8b composing a II-VI group compound semiconductor and a dopant 10 received in crucibles 6a, 6b and 9, respectively, are heated and injected toward the substrate 2 from the crucibles under the high vacuum. On this occasion, a cluster 11a or 11b is bombarded with electrons discharged by a thermion discharging filament 4a or 4b and accelerated by an electron accelerating electrode 5a or 5b so as to ionize them. In such a manner, the II-VI group compound semiconductor having a conductivity contrary to that of the substrate 2 is epitaxially grown on the substrate 2, whereby a p-n junction of the II-VI group compound semiconductor is formed.