Vacuum deposition method using a continuous feeding device peunik Tide

摘要

A film deposition apparatus characterised in that it comprises:(A) a reservoir containing heated pnictide;(B) means for passing an inert gas therethrough;(C) a high vacuum film deposition chamber; and(D) means for supplying the said inert gas carrying the said pnictide as a vapour species after passing through the said pnictide to the said deposition chamber is disclosed.;A high vacuum deposition process characterised in that it comprises passing an inert gas through heated pnictide and supplying the product gas to a vacuum chamber maintained at a pressure below 10-³ Torr (1.33 x 10^-1 Pa) is also disclosed.;Referring to the accompanying Illustrative diagram, the present apparatus may comprise reservoir (30), means for passing inert gas therethrough (28), deposition chamber (22) and supply means (60).;Films of pnictide, polypnictide and other pnictide compounds may be deposited for semiconductor and other applications including insulation and passivation, particularly on III-V semiconductors.;The present invention represents an advance over the prior art.