首页> 外国专利> DEVICE AND PROCESS FOR THE REDUCTION OF THERMAL REACTIONS IN MONOLITHIC INTEGRATED CIRCUITS

DEVICE AND PROCESS FOR THE REDUCTION OF THERMAL REACTIONS IN MONOLITHIC INTEGRATED CIRCUITS

机译:减少单分子集成电路中热反应的装置和方法

摘要

1. Device for the reduction of the temperature variation speeds within a semi-conductor substrate of a thermally conducting monolithic integrated circuit, comprising within the substrate means responding to the temperature of the substrate, means producing heat within the substrate and control means elctrically connecting the temperature-responsive means to the heat-producing means in a manner to cause the latter to modify the quantity of heat produced, said modification being produced in a sense opposite to that of the temperature variations, characterized in that the control means cause the quantity of produced heat to vary only during the duration of the temperature variations and to restore the quantity of heat produced to a constant level when the temperature is stable, this constant level being independent of the value of this stable temperature.
机译:1.用于减小导热单片集成电路的半导体衬底内的温度变化速度的装置,其包括:在衬底内的装置,其响应于衬底的温度;在所述衬底内产生热量的装置;以及控制装置,其电连接所述控制装置。温度响应装置以使热产生装置改变产生的热量的方式产生热量,所述改变以与温度变化相反的方式产生,其特征在于,控制装置引起热量的产生。产生的热量仅在温度变化期间发生变化,并在温度稳定时将产生的热量恢复到恒定水平,该恒定水平与该稳定温度的值无关。

著录项

  • 公开/公告号DE3070147D1

    专利类型

  • 公开/公告日1985-03-28

    原文格式PDF

  • 申请/专利权人 THOMSON-CSF;

    申请/专利号DE19803070147T

  • 发明设计人 MOREAU JEAN-MICHEL;

    申请日1980-06-03

  • 分类号H01L27/02;H01L23/56;

  • 国家 DE

  • 入库时间 2022-08-22 07:58:14

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