Acoustic surface waves a helicoidal guide forming a component

摘要

A surface acoustic wave device comprises a silicon substrate, a silicon dioxide layer provided on the silicon substrate, a zinc oxide layer provided on the silicon dioxide layer and input and output electrodes provided on the zinc oxide layer. The silicon substrate is cut by a crystalline surface substantially equivalent to the (100)- or (110)- surface, and the zinc oxide layer is such that its crystalline surface substantially equivalent to the (0001)-surface is parallel to the cut- surface of the silicon substrate, so that a surface acoustic wave entered from the input electrode is propagated to the output electrode in a direction substantially equivalent to the 011!- or 001!-axis of the silicon substrate.