Method of fabricating submicron silicon structures such as permeable base transistors

摘要

Submicron silicon structures are fabricated by repeat oxidation and stripping the walls of a U-groove leaving thin silicon fingers.P PThis method may be used to fabricate a silicon transistor having an emitter and a collector separated by a channel. The channel is formed in a silicon finger by a Schottky base, which at zero bias pinches off conduction of the channel. A bias voltage on the Schottky base causes conduction. The channel has a very short length making the transistor capable of high frequency operation.