Silicon permeable base transistors fabricated with a new submicron technique

摘要

A new approach for the fabrication of Peameable Base Transistors (PBT) has been realized with silicon. This approach uses highly anisotropic orientation dependent chemical etch to form U-grooves in silicon and self-aligned metal evaporation to form emitter contact and base schottky barrier. A new submicron technique, capable of fabricating microstructures with a few hundred angstrom dimensions, has been developed and used to meet the dimensional requirement for PBT. Computer simulation of the new PBT structures indicates there is no significant difference in performance from the previous structures with embedded base.