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High-mobility amorphous silicon displaying non-dispersive transport properties
High-mobility amorphous silicon displaying non-dispersive transport properties
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机译:高迁移率非晶硅,显示非分散传输特性
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摘要
The present invention teaches a combination of parameters for the glow discharge decomposition of silane deposition of an amorphous silicon semiconductor having non-dispersive high mobility transport of majority carriers through the semiconductor material, useful in switching devices such as diodes, transistors and the like.
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