HIGH MOBILITY AMORPHOUS SILICON DISPLAYING NON- DISPERSIVE TRANSPORT PROPERTIES

摘要

ABSTRACT OF THE DISCLOSUREThe present invention teaches a combination ofparameters for the glow discharge decomposition of silanedeposition of an amorphous silicon semiconductor havingnon-dispersive high mobility transport of majority carriersthrough the semiconductor material, useful in switchingdevices such as diodes, transistors and the like.