Element of the circuit integrated laterally isolated by the oxide and comprising a transistor t and a resistor r, the resistance being formed by an extension 221 of the base 220, the extension in which is located a sender 23. / p & & p & the pinching zone 223 located under the sender 23 is overdoped selectively compared, in particular, the pinching zone 224 located in the sender 24. / p & & p & element is intended, in combination with another element that is substantially identical, in the embodiment of the cells points memoires.
展开▼