Subject of the memory circuit integrated bipolar, the subject of memory cell completed with the aid of said element

摘要

Element of the circuit integrated laterally isolated by the oxide and comprising a transistor t and a resistor r, the resistance being formed by an extension 221 of the base 220, the extension in which is located a sender 23. / p & & p & the pinching zone 223 located under the sender 23 is overdoped selectively compared, in particular, the pinching zone 224 located in the sender 24. / p & & p & element is intended, in combination with another element that is substantially identical, in the embodiment of the cells points memoires.