CRUCIBLE FOR PULLING SEMICONDUCTOR CRYSTAL AND METHOD FOR PULLING SEMICONDUCTOR CRYSTAL USING SAID CRUCIBLE

摘要

PURPOSE:To prevent damage of an inside wall of a crucible and to prepare economically a Group III-V compound semiconductor single crystal having low thermal strain and high quality by using a specified crucible comprising a main crucible and an auxiliary crucible and pulling a semiconductor crystal using the crucible. CONSTITUTION:A crucible for pulling a semiconductor crystal is contructed by fitting loosely a main crucible 9 made of BN having a height l to the inside of a quartz auxiliary crucible 10 having a longer height l'. Then, a Group III metal, i.e. Gal and a Group V metal, i.e. As 2 are charged to the main crucible 9, and a liquid sealing material B2O3 4 is charged to the auxiliary crucible 10. The crucible is heated at 1,240 deg.C to fill the main cruckble 9 with GaAs melt 5 and the auxiliary crucible 10 with the sealing material 4'. A single crystal is formed in the B2O3 4' in the auxiliary crucible 10 by dipping a seed crystal 6 in the GaAs melt in the main crucible 9. After a long sized crystal 7 is formed, the crystal is separated from residual GaAs melt 5 and cooled slowly, then pulled out of the auxiliary crucible 10 while keeping the upper surface of the liquid sealing material B2O3 4' to remain in the auxiliary crucible 10.