technological manufacturing process Diode Centes electroluminis-assisted laser diffusion in semiconductor compounds

摘要

The process comprises evapn. under vacuum exceeding 10 power -6 mmHg of Sn, Au/Ge, Au/Ge, Au/Ge/Ni over the rear non-polished surface of a type -N+ substrate. This is followed by evapn. under vacuum exceeding 10 power -6 mmHg, of the Au/Zn contact and a thin (50-100 Angstrom) layer of Zn on the other polished surface of the substrate. The resulting alloying of the rear contact of Sn, Au/Ge or Au/Ge/Ni is carried out by laser pulse exceeding 1 J/cm2, energy density, with diffusion of the type P impurity and alloying of the Au contact with 0.3-5 J/cm2 laser pulse, with final removal of the excess metallisation Zn, the type P impurity used, by selective chemical attack.