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PROCESS FOR MANUFACTURING INTEGRATED MOS FIELD EFFECT TRANSISTORS, PARTICULARLY CIRCUITS HAVING COMPLEMENTARY MOS FIELD EFFECT TRANSISTORS WITH AN ADDITIONAL CONDUCTOR LEVEL COMPRISING METAL SILICIDES
PROCESS FOR MANUFACTURING INTEGRATED MOS FIELD EFFECT TRANSISTORS, PARTICULARLY CIRCUITS HAVING COMPLEMENTARY MOS FIELD EFFECT TRANSISTORS WITH AN ADDITIONAL CONDUCTOR LEVEL COMPRISING METAL SILICIDES
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机译:制造集成MOS场效应晶体管的过程,特别是具有互补的MOS场效应晶体管和附加导电层的金属硅化物
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摘要
A method for producing integrated MOS field effect transistors, particularly complementary MOS field effect transistor circuits (CMOS-FET's) is provided wherein a metal silicide level, comprised preferably of tantalum silicide, is utilized as an additional interconnect (11). In this manner, all contact areas (9, 10, 13, 14, 15) to active (MOS) regions (6, 7) and polysilicon regions (5) for the metal silicide level (11) and also for the metal interconnect (12) are opened before the precipitation of the metal silicides. The structuring of the metal silicide level (11) is executed in such a manner that the p+ regions of the circuit remain protected during a flow-spread of an intermediate oxide (17) comprised of phosphorous glass.
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