Chemicalvapor deposition (CVD) of cubic silicon carbide SiC

摘要

A method for chemical vapor deposition (CVD) of cubic Silicon Carbide (SiC) comprising the steps of etching silicon substrates having one mechanically polished face; depositing a thin buffer layer of cubic SiC formed by reaction between a heated Si substrate and a H.sub.2 C.sub. 3 H. sub.8 gas mixture; and depositing SiC on the buffer layer at high temperature using H.sub.2 +C.sub.3 H.sub.8 +SiH.sub.4 mixture.