首页> 外国专利> PRODUCTION OF THIN LEAD LANTHANUM TITANATE ZIRCONATE FILM

PRODUCTION OF THIN LEAD LANTHANUM TITANATE ZIRCONATE FILM

机译:薄铅钛酸锆锆酸盐薄膜的生产

摘要

PURPOSE:To stably form a good and thin lead lanthanum titanate zirconate film with good accuracy in a multi-element sputtering method by covering part of the surface of a Pb target with Ti or Zr. CONSTITUTION:Targets 1, 2, 3, 4 consisting of Ti, Zr, Pb, La are used in the multi-element sputtering method. Part of the surface of the Pb targent 3 among these targets is coated with an auxiliary target 5 consisting of Ti or Zr. Independent high voltage power sources 9 are connected to the targets 1, 2, 3, 4 to impress respectively adequate electric powers thereto so that the intended thin lead lanthanum titanate zirconate film is formed on the surface of a substrate 6. The adequate limitation of the evaporation rate of Pb is made possible by increasing the area of the auxiliary target 5 even if the sputtering rate of the Pb target 3 is high. The thin film having the adequate component ratios is thus obtd. in spite of the impression of the large electric power.
机译:目的:在多元素溅射方法中,通过用Ti或Zr覆盖Pb靶材的一部分表面,稳定,良好地形成良好且薄的钛酸铅镧锆酸盐薄膜。组成:由Ti,Zr,Pb,La组成的靶1、2、3、4用于多元素溅射方法。这些靶中的Pb靶3的表面的一部分被由Ti或Zr构成的辅助靶5覆盖。独立的高压电源9连接至靶材1、2、3、4,以分别向其施加适当的电功率,从而在基板6的表面上形成预期的钛酸镧钛酸铅锆薄膜。即使Pb靶3的溅射率高,也可以通过增加辅助靶5的面积来使Pb的蒸发率增大。因此,获得了具有足够的组分比的薄膜。尽管有巨大的电力印象。

著录项

  • 公开/公告号JPS61266565A

    专利类型

  • 公开/公告日1986-11-26

    原文格式PDF

  • 申请/专利权人 MATSUSHITA ELECTRIC IND CO LTD;

    申请/专利号JP19850107378

  • 申请日1985-05-20

  • 分类号C23C14/34;C01G25/00;C23C14/06;C23C14/08;G02F1/055;H01L41/39;

  • 国家 JP

  • 入库时间 2022-08-22 07:24:00

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